PCIM: Rohm’s 4th generation SiC mosfets

They are all trench types and have more flexible gate drive requirements than before – operating at 15 – 18V, with support for unipolar (0V) turn-off.

So far 22 devices have been announced, 12 of them AEC-Q101 automotive grade, spanning 750 or 1,200V, 24 – 105A, 13 – 62mΩ and 93 – 312W, all with 175°C maximum junction temperature.

Package options include TO-247-4L, TO-247N and TO263-7L.

Picking the highest current part as an example, the 750V 105A TO-247-4L SCT4013DR is specified at 13mΩ typical and 16.9mΩ max at 25°C, rising to 22.2mΩ typical at 150°C (all 18V gate, 58A drain). Typically, total gate charge is 170nC (500V, 58A, 18V gate.

Turn on and off delays are 17 and 82ns respectively, while rise and fall time are 32 and 17ns. Switching losses are put at 500μJ on, and 310μJ off – all these figures are with the gate switching between +18V and 0V and no negative drive.

Meanwhile the inherent body diode recovers in 16ns for 290nC, peaking at 36A. Forward drop is 3.3V.

The company also spoke of growing SiC facilities, with the completion of a new building at its Apollo plant in Chikugo, Japan, and plans to hit “several 100,000 substrates a year” from its SiCrystal wafer factory in Nuremberg.

“As a vertically integrated semiconductor manufacturer we are largely independent of suppliers and can respond more flexibly to market changes,” claimed Rohm Europe president Wolfram Harnack. “The integration of our fabs gives us an advantage over manufacturers who outsource many production steps.”

Rohm’s 4th generation SiC mosfets can be found in this table, which can be searched by generation.

There is also an extensive 4th generation application note, which has been put together with some care.

SCT4013DR product page